ENHANCED DIFFRACTION-LIMITED OUTPUT POWER OF TAPERED GAIN SEMICONDUCTOR-LASERS

Citation
Aj. Kent et al., ENHANCED DIFFRACTION-LIMITED OUTPUT POWER OF TAPERED GAIN SEMICONDUCTOR-LASERS, OPTICS EXPRESS, 2(12), 1998, pp. 509-514
Citations number
8
Categorie Soggetti
Optics
Journal title
ISSN journal
10944087
Volume
2
Issue
12
Year of publication
1998
Pages
509 - 514
Database
ISI
SICI code
1094-4087(1998)2:12<509:EDOPOT>2.0.ZU;2-J
Abstract
The spatiotemporal dynamics of linearly and trumpet flared high bright ness semiconductor lasers are compared and contrasted using a comprehe nsive model built up from the microscopic physics. While both devices display complex multi longitudinal mode dynamics, the trumpet flared d evice is less susceptible to transverse filamentation instabilities an d, hence, displays superior time-averaged far-field imaging properties . (C) 1998 Optical Society of America.