RADIATION HARDNESS OF GAAS P-I-N STRUCTURES

Authors
BOLOTOV VN IVANSHIN YI
Citation
Vn. Bolotov et Yi. Ivanshin, RADIATION HARDNESS OF GAAS P-I-N STRUCTURES, Instruments and experimental techniques, 41(4), 1998, pp. 496-497
Citations number
7
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
41
Issue
4
Year of publication
1998
Pages
496 - 497
Database
ISI
SICI code
0020-4412(1998)41:4<496:RHOGPS>2.0.ZU;2-1
Abstract
The effect of neutron and gamma-quanta irradiation on GaAs structures was studied. The comparison of charge-collection efficiency and noise characteristics of p-i-n diodes of conventional type and those with tr apezoidal crystal lattice showed that the latter possess higher radiat ion hardness.