HYDROUS OXIDE FILM GROWTH ON PT - I - TYPE-I BETA-OXIDE FORMATION IN 0.1 M H2SO4

Authors
Citation
Sj. Xia et Vi. Birss, HYDROUS OXIDE FILM GROWTH ON PT - I - TYPE-I BETA-OXIDE FORMATION IN 0.1 M H2SO4, Electrochimica acta, 44(2-3), 1998, pp. 467-482
Citations number
39
Categorie Soggetti
Electrochemistry
Journal title
ISSN journal
00134686
Volume
44
Issue
2-3
Year of publication
1998
Pages
467 - 482
Database
ISI
SICI code
0013-4686(1998)44:2-3<467:HOFGOP>2.0.ZU;2-I
Abstract
The objective of this work has been to establish the compositional pro perties of hydrous oxide films formed at polycrystalline Pt electrodes in 0.1 mol/l sulfuric acid by multicycling to moderately positive pot entials, i.e., less than 1.8 V vs. RHE. Under these conditions, both a compact (alpha) and an overlaying hydrous (beta) oxide film (''Type I '') form. Both QCMB and ellipsometric methods have been used, along wi th electrochemical techniques, to characterize the alpha-oxide and the Type I beta-oxide film. It has been shown that the alpha-oxide films are non-hydrated under all conditions, being either PtO or PtO2. Very thin beta-oxide films formed in the first cn. 30 s of growth are sugge sted to be Pt(OH)(4). As the beta-oxide film thickens with time of gro wth, it becomes increasingly hydrated, particularly towards its outer surface, with a mass consistent with Pt(OH)(4). H2O and later with Pt( OH)(4). 2H(2)O. The increasing water content of the film with thicknes s can also be viewed as reflecting an increasing extent of film porosi ty in the outer regions of the film. (C) 1998 Elsevier Science Ltd. Al l rights reserved.