PREPARATION AND CHARACTERIZATION OF TI DIAMOND ELECTRODES/

Citation
V. Fisher et al., PREPARATION AND CHARACTERIZATION OF TI DIAMOND ELECTRODES/, Electrochimica acta, 44(2-3), 1998, pp. 521-524
Citations number
14
Categorie Soggetti
Electrochemistry
Journal title
ISSN journal
00134686
Volume
44
Issue
2-3
Year of publication
1998
Pages
521 - 524
Database
ISI
SICI code
0013-4686(1998)44:2-3<521:PACOTD>2.0.ZU;2-5
Abstract
Boron doped diamond films have been deposited on Ti substrates by CVD. Raman spectroscopy reveals the presence of small amounts of nondiamon d carbon. According to SEM;ind XRD, the diamond Rims polycrystalline w ith preferential [112] crystallite orientation. Electrochemical measur ements show that Fe(CN)(6)(3-/4-) couple behaves in a quasi-reversible manner at the Ti/Diamond electrode. The main reason of the successful preparation of the Ti/Diamond electrode is the formation of an conduc tive TIC interlayer between the Ti substrate and the diamond coating. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.