Citation
Ma. Mccord et al., THE MICROMECHANICAL TUNNELING TRANSISTOR, Journal of micromechanics and microengineering, 8(3), 1998, pp. 209-212
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical","Instument & Instrumentation
Journal title
ISSN journal
09601317
Volume
8
Issue
3
Year of publication
1998
Pages
209 - 212
Database
ISI
SICI code
0960-1317(1998)8:3<209:TMTT>2.0.ZU;2-O
Abstract
We present a theoretical study of the performance of a novel device we
call the micromechanical tunneling transistor. The device is similar
in design to a micromachined electrostatic relay, but operates by cont
rolling the tunneling current across a nanometer sized gap. The term t
ransistor is used because the device uses an input voltage to control
the electron flow across a barrier. Unlike typical semiconductor devic
es, the current flow is controlled by the width of the barrier rather
than the height of the barrier.