Kj. Roberts et al., THE IMPORTANCE OF CONSIDERING GROWTH-INDUCED CONFORMATIONAL CHANGE INPREDICTING THE MORPHOLOGY OF BENZOPHENONE, Journal of physics. D, Applied physics, 26(8B), 1993, pp. 7-21
The underlying crystal-growth theory and structural molecular chemistr
y important in our understanding of the methodology behind the theoret
ical prediction of crystal morphology is presented together with its a
pplication to the molecular solid benzophenone. Benzophenone crystalli
zes in the orthorhombic space group P2(1)2(1)2(1) with a well defined
morphology dominated by large {110} faces with smaller {021}, {011}, {
101}, {111}, {002} and {020} faces, and forms in a habit elongated alo
ng the c crystallographic axis. A comparison of this observed morpholo
gy with that predicted from lattice geometry, PBC analysis, attachment
energy and Ising models reveals a much more squat habit with only the
{110}, {011} and {101} forms predicted. Calculations of the Ising tem
peratures reveal that only the {110} crystal form should grow below th
e roughening transition, in direct contradiction to the experimental d
ata. These discrepancies are rationalized through a consideration of t
he change in the molecular conformation experienced by the benzophenon
e molecule during the growth process, as revealed from a comparison be
tween the crystallographic structure and that calculated using semi-em
pirical molecular-orbital methods for the free molecule. Examination o
f the molecular packing in the solid state reveals that this conformat
ional change is easier to accommodate in the {hk0} and {00l} faces whe
re the surface binding sites are unconstrained and where the number of
significant atom-atom interactions is small. This is in contrast to t
he pyramidic {hkl} faces where the conformational change appears to re
sult in stronger surface adsorption which leads, in turn, to an undere
stimation of the surface attachment energy if the molecular arrangemen
t in the solid-state structure is assumed. The implication of this add
itional conformation-change enthalpy involved in crystal growth at the
crystal-solution interface for the proportionality, surface/bulk equi
valence and equivalent wetting assumptions used in modelling theory ar
e discussed.