STRESS ANISOTROPY AND STRUCTURE OF TIN THIN-FILMS

In many sputtering processes the substrate is rotated or periodically moved with respect to the target in order to obtain a homogeneous film deposition. In that case anisotropic conditions of film growth exist which lead to anisotropic mechanical stresses. The stress anisotropy d epends on the carrier velocity and can be attributed to the film struc ture. The stress measurements, therefore, will be related to measureme nts of composition by SNMS, to determination of stoichiometry by ellip sometry and to investigations of structure by X-ray diffraction.