ELECTRONIC-STRUCTURE OF SI1-X-YCXGEY

Authors
REZKI M TADJER A ABID H AOURAG H
Citation
M. Rezki et al., ELECTRONIC-STRUCTURE OF SI1-X-YCXGEY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 157-161
Citations number
36
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
55
Issue
3
Year of publication
1998
Pages
157 - 161
Database
ISI
SICI code
0921-5107(1998)55:3<157:EOS>2.0.ZU;2-K
Abstract
The pseudopotential method associated with the improved virtual crysta l approximation (VCA) is used to calculate the electronic band structu re and density of states of Si1-x-yCxGey alloys. We find that the addi tion of carbon to the SiGe alloy lowers the gap. We also show that the improved VCA exhibits the true bowing of the band gap. Results show a lso the behaviour of the valence band width versus carbon concentratio n which increases as carbon concentration increases. (C) 1998 Publishe d by Elsevier Science S.A. All rights reserved.