ANALYSIS OF PROPERTIES OF ION-IMPLANTED PLANAR OPTICAL WAVE-GUIDES INCR-KTIOPO4 AND ER-KTIOPO4

Two planar optical waveguides in Cr:KTiOPO4 and Er:KTiOPO4 were formed by implantation of MeV He ions. The dose of implanted He ions was 1.4 x 10(16) ions cm(-2) by an energy of 2.8 MeV at 300 K. The dark modes were measured by using the standard dark modes measurement technique involving an isosceles prism (LiTaO3). The refractive index profiles o f the waveguide were analyzed by using parametrized index profile reco nstruction (PIPR) methods. The lattice damage in the guiding region of the crystal that was caused by the implantation of MeV He ions was in vestigated by using RBS/channeling technique. The existence of Er3+ io ns in Er:KTiOPO4 was verified using total-reflection X-ray fluorescenc e (TXRF) analysis techniques and the fluorescence spectra of Cr3+ in C r:KTiOPO4 were measured. (C) 1998 Elsevier Science S.A. All rights res erved.