OXIDATION DEPENDENT CRYSTALLIZATION BEHAVIOR OF IO AND ITO THIN-FILMSDEPOSITED BY REACTIVE THERMAL DEPOSITION TECHNIQUE

Indium oxide (IO) and indium tin oxide (ITO) thin films were deposited by reactive thermal deposition technique using Indium and In-Sn alloy sources. Depositions were carried out for different substrate tempera tures and for different deposition rates. X-Ray diffraction studies re veals the change in the predominant plane of crystallization of the IO and ITO films from (222) to (400) during the increase in deposition r ate. The concentration of tin in the indium oxide does not seem to aff ect the orientation changes. Optical band-gap studies reveal that the films with (400) predominant planes have relatively lower band-gap tha n the films with (222) predominant planes. Electrical characterization studies exhibit a relatively higher conductivity for the films with ( 400) predominant planes. (C) 1998 Elsevier Science S.A. All rights res erved.