Kw. Richter et al., CONTACT MATERIALS FOR III-V SEMICONDUCTORS - PHASE-EQUILIBRIA OF INSBIN THE TERNARY-SYSTEM IN-NI-SB, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 44-52
The In-Ni-Sb phase diagram was investigated in the compositional regio
n of the compound semiconductor InSb. The phase equilibria were establ
ished in two isothermal sections at 440 and 300 degrees C, respectivel
y, by means of EPMA and X-ray diffraction. Using DTA experiments, six
invariant ternary phase reactions were identified and a complete react
ion scheme was constructed in the respective composition area. The B8(
1)-type phase Ni1+/-xSb and the B8(2)-type zeta-phase in the Ni-In sys
tem were found to form a continuous solid solution which was studied i
n detail at 900 degrees C. The lattice parameters of the ternary phase
Ni1+/-x (SbyIn1-y) (zeta-phase) were determined as a function of comp
osition along a section connecting the two binary melting point maxima
. (C) 1998 Elsevier Science S.A. AII rights reserved.