CONTACT MATERIALS FOR III-V SEMICONDUCTORS - PHASE-EQUILIBRIA OF INSBIN THE TERNARY-SYSTEM IN-NI-SB

Citation
Kw. Richter et al., CONTACT MATERIALS FOR III-V SEMICONDUCTORS - PHASE-EQUILIBRIA OF INSBIN THE TERNARY-SYSTEM IN-NI-SB, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 44-52
Citations number
35
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
55
Issue
1-2
Year of publication
1998
Pages
44 - 52
Database
ISI
SICI code
0921-5107(1998)55:1-2<44:CMFIS->2.0.ZU;2-E
Abstract
The In-Ni-Sb phase diagram was investigated in the compositional regio n of the compound semiconductor InSb. The phase equilibria were establ ished in two isothermal sections at 440 and 300 degrees C, respectivel y, by means of EPMA and X-ray diffraction. Using DTA experiments, six invariant ternary phase reactions were identified and a complete react ion scheme was constructed in the respective composition area. The B8( 1)-type phase Ni1+/-xSb and the B8(2)-type zeta-phase in the Ni-In sys tem were found to form a continuous solid solution which was studied i n detail at 900 degrees C. The lattice parameters of the ternary phase Ni1+/-x (SbyIn1-y) (zeta-phase) were determined as a function of comp osition along a section connecting the two binary melting point maxima . (C) 1998 Elsevier Science S.A. AII rights reserved.