OPTIMIZATION OF RF MAGNETRON SPUTTERING AND RTA-CRYSTALLIZATION OF PB(ZR0.52TI0.48)O-3 THIN-FILMS BY MEANS OF THE ORTHOGONAL ARRAY METHOD

Pb(ZrxTi1-x)O-3 thin films are very attractive in microelectronics and microsystems applications for their enhanced ferroelectric and piezoe lectric properties. However, deposition of this material requires mult i-parameter complicated processes. This study validates the RF magnetr on sputtering process and is based on an orthogonal array method allow ing accurate research of the best sputtering parameters. The depositio n is realized without substrate heating and without PbO excess in the target. PZT thin films are sputtered on Si/SiO2/Ti/Pt substrate with a satisfactory chemical composition, as given by Energy Dispersive Spec troscopy (EDS). A crack-free surface after Rapid Thermal Annealing (RT A) was obtained at a high sputtering pressure of 8 Pa. Pb stoichiometr y is obtained for a high sputtering power (90 W corresponding to 3.8 W /cm(2)) and a large target-substrate distance (60 mm). An Ar/O-2 (90:1 0) mixture of sputtering gas is used to avoid oxygen deficient films. X-Ray diffractometry (XRD) shows the perovskite phase with (111)-orien tation, corresponding to the ferroelectric: polarisation axis. (C) 199 8 Elsevier Science S.A. All rights reserved.