E. Defay et al., OPTIMIZATION OF RF MAGNETRON SPUTTERING AND RTA-CRYSTALLIZATION OF PB(ZR0.52TI0.48)O-3 THIN-FILMS BY MEANS OF THE ORTHOGONAL ARRAY METHOD, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 123-129
Pb(ZrxTi1-x)O-3 thin films are very attractive in microelectronics and
microsystems applications for their enhanced ferroelectric and piezoe
lectric properties. However, deposition of this material requires mult
i-parameter complicated processes. This study validates the RF magnetr
on sputtering process and is based on an orthogonal array method allow
ing accurate research of the best sputtering parameters. The depositio
n is realized without substrate heating and without PbO excess in the
target. PZT thin films are sputtered on Si/SiO2/Ti/Pt substrate with a
satisfactory chemical composition, as given by Energy Dispersive Spec
troscopy (EDS). A crack-free surface after Rapid Thermal Annealing (RT
A) was obtained at a high sputtering pressure of 8 Pa. Pb stoichiometr
y is obtained for a high sputtering power (90 W corresponding to 3.8 W
/cm(2)) and a large target-substrate distance (60 mm). An Ar/O-2 (90:1
0) mixture of sputtering gas is used to avoid oxygen deficient films.
X-Ray diffractometry (XRD) shows the perovskite phase with (111)-orien
tation, corresponding to the ferroelectric: polarisation axis. (C) 199
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