STUDY OF DRY AND ELECTROGENERATED TA2O5 AND TA TA2O5/PT STRUCTURES BYXPS/

Citation
O. Kerrec et al., STUDY OF DRY AND ELECTROGENERATED TA2O5 AND TA TA2O5/PT STRUCTURES BYXPS/, Materials science & engineering. B, Solid-state materials for advanced technology, 55(1-2), 1998, pp. 134-142
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
55
Issue
1-2
Year of publication
1998
Pages
134 - 142
Database
ISI
SICI code
0921-5107(1998)55:1-2<134:SODAET>2.0.ZU;2-4
Abstract
Two kinds of tantalum oxide films have been studied by XPS: dry and el ectrogenerated anodic oxides. XPS spectra of Ta4f and Ols have been us ed to determine the chemical composition of the different films. Ta2O5 is the main constituent of thick films (15 nm less than or equal to d (ox) less than or equal to 60 nm), although the concomitant presence o f sub-oxides (mainly TaO) is observed. In thin Alms (d(ox) < 15 nm), t he amount of Ta-11 is larger and depends on the preparation procedure. Estimations of the thickness of the oxide layers are given. Ta/Ta2O5/ Pt structures were prepared by depositing Pt by photoinduction. The XP S Pt4f spectra have shown the presence of Pt-0. Pt-II and Pt-IV at the metal-oxide interface. On the contrary, the spectra of electrodeposit ed Pt present only the Pt(0)4f doublet. Accordingly, these two kinds o f structures have different electrochemical behaviours in the presence of a redox couple in solution. Ta/Ta2O5 structures exhibit a diode ef fect, whereas Ta/Ta2O5/Pt behave rather like Pt electrodes. (C) 1998 E lsevier Science S.A. All rights reserved.