Fk. Koschnick et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF AN ARSENIC-ANTISITE-ARSENIC-VACANCY COMPLEX IN GAAS, Physical review. B, Condensed matter, 58(12), 1998, pp. 7707-7716
An arsenic-antisite-related defect produced in n-type GaAs by 2 MeV el
ectron irradiation was investigated using magnetic circular dichroism
of the optical al:sorption (MCDA), MCDA-detected electron paramagnetic
resonance (MCDA-EPR), and MCDA-detected electron-nuclear double reson
ance (MCDA-ENDOR). In comparison to several other arsenic-antisite-rel
ated defects, like the EL2 defect, the investigated defect has a reduc
ed hyperfine interaction with the central As-Ga atom (2050 MHz compare
d to 2650 MHz for EL2). Large superhyperfine interactions with the nea
rest arsenic neighbor shell of the order of 250 MHz were observed. Fro
m the analysis of the MCDA-EPR line shape and the MCDA-ENDOR data, it
was concluded that the defect consists of an arsenic antisite and a fi
rst As shell vacancy. [S0163-1829(98)06536-9].