OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF AN ARSENIC-ANTISITE-ARSENIC-VACANCY COMPLEX IN GAAS

Citation
Fk. Koschnick et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF AN ARSENIC-ANTISITE-ARSENIC-VACANCY COMPLEX IN GAAS, Physical review. B, Condensed matter, 58(12), 1998, pp. 7707-7716
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
12
Year of publication
1998
Pages
7707 - 7716
Database
ISI
SICI code
0163-1829(1998)58:12<7707:ODMSOA>2.0.ZU;2-3
Abstract
An arsenic-antisite-related defect produced in n-type GaAs by 2 MeV el ectron irradiation was investigated using magnetic circular dichroism of the optical al:sorption (MCDA), MCDA-detected electron paramagnetic resonance (MCDA-EPR), and MCDA-detected electron-nuclear double reson ance (MCDA-ENDOR). In comparison to several other arsenic-antisite-rel ated defects, like the EL2 defect, the investigated defect has a reduc ed hyperfine interaction with the central As-Ga atom (2050 MHz compare d to 2650 MHz for EL2). Large superhyperfine interactions with the nea rest arsenic neighbor shell of the order of 250 MHz were observed. Fro m the analysis of the MCDA-EPR line shape and the MCDA-ENDOR data, it was concluded that the defect consists of an arsenic antisite and a fi rst As shell vacancy. [S0163-1829(98)06536-9].