NEUTRAL INTERSTITIAL IRON CENTER IN SILICON STUDIED BY ZEEMAN SPECTROSCOPY

Citation
A. Thilderkvist et al., NEUTRAL INTERSTITIAL IRON CENTER IN SILICON STUDIED BY ZEEMAN SPECTROSCOPY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7723-7733
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
12
Year of publication
1998
Pages
7723 - 7733
Database
ISI
SICI code
0163-1829(1998)58:12<7723:NIICIS>2.0.ZU;2-S
Abstract
The Zeeman effect of the interstitial iron defect in silicon has been investigated by high-resolution Fourier-transform spectroscopy. Two se ts of experimentally observed line spectra have previously been identi fied as optical excitations of neutral interstitial iron, Fe-i(0). The first set arises when an electron is excited to a shallow-donor-like state, Fe-i(0)+h nu-->Fe++e(-), where the electron is decoupled from t he Fe+ core whose ground state is a T-4(1) term. The second set arises when an excited electron of a, symmetry ii; coupled by exchange inter action to the Fe+ core, yielding a T-5(1) final stat. The Zeeman behav ior of these transitions is studied in order to verify the assignment of the states and the effective-mass-like character of the decoupled e lectron. Detailed information on the initial state and on the properti es of the iron core is gained. Experiments determine the multiplet spl itting of the T-4(1) and T-5(1) states due to spin-orbit interaction b ut large deviations from the Lande interval rule are observed, as well as a marked decrease in intensity for the high-energy components. Our analysis confirms that the T-4(1) and T-5(1) states are closely relat ed, and a dynamical Jahn-Teller distortion is suggested to be the domi nant mechanism responsible for the non-Lande behavior, [S0163-1829(98) 06036-6].