OXYGEN ISOELECTRONIC IMPURITIES IN ZNTE - PHOTOLUMINESCENCE AND ABSORPTION-SPECTROSCOPY

Citation
Mj. Seong et al., OXYGEN ISOELECTRONIC IMPURITIES IN ZNTE - PHOTOLUMINESCENCE AND ABSORPTION-SPECTROSCOPY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7734-7739
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
12
Year of publication
1998
Pages
7734 - 7739
Database
ISI
SICI code
0163-1829(1998)58:12<7734:OIIIZ->2.0.ZU;2-1
Abstract
Oxygen substituting for Te in ZnTe is an isoelectronic impurity that t raps excitons. The recombination radiation and absorption spectra attr ibuted to isolated oxygen centers exhibit a no-phonon line accompanied by emission of multiple phonons. The two resulting spectra are ''mirr or images'' of each other in energy with respect to that of the no-pho non line. Photoluminescence and absorption measurements on specimens w ith significantly higher oxygen concentration disclosed additional spe ctral features with four no-phonon lines, all displaced to Io;tier ene rgies with respect to that of isolated ox gen. Photoluminescence spect ra of the present no-phonon lines show a temperature dependence charac teristic of exchange coupling between an electron and a hole. Selectiv e excitation with photon energies less than that of the no-phonon line of isolated oxygen permitted a clear observation of the features free from the phonon sidebands of isolated oxygen. These features, includi ng phonon replicas, appear to be due to excitons bound to oxygen pairs , with different OO separations. [S0163-1829(98)03236-6].