S. Picozzi et al., INFLUENCE OF THE EXCHANGE-REACTION ON THE ELECTRONIC-STRUCTURE OF GANAL JUNCTIONS/, Physical review. B, Condensed matter, 58(12), 1998, pp. 7906-7912
Ab initio full-potential Linearized augmented plane-wave (FLAPW) calcu
lations have been used to study the influence of the interface morphol
ogy and, notably, of the exchange reaction on the electronic propertie
s of Al/GaN (100) interfaces. Although the detailed mechanism is not u
nderstood, the exchange reaction has been purported to influence the S
chottky barrier height (SBH) as a result of the formation of an interf
acial GaxAl1-xN layer. In particular, the effects of interface structu
re (i.e., interfacial bond lengths, semiconductor surface polarity, an
d reacted intralayers) on the SBH at the Al/GaN (001) junction are spe
cifically addressed. Thus, the electronic structure of the following a
tomic configurations have been investigated theoretically: (i) an abru
pt, relaxed GaN/Al interface; (ii) an interface that has undergone one
monolayer of exchange reaction; and interfaces with a monolayer-thick
interlayer of (iii)ALN and (iv) Ga0.5Al0.5N. The exchange reaction is
found to be exothermic with an enthalpy of 0.1 eV/atom. We find that
the first few layers of semiconductor are metallic due to the tailing
of metal-induced gap states; therefore, the presence of a monalayer-th
ick interfacial alloy layer does not result in an enhanced band gap ne
ar the interface. Intermixed interfaces are found to pin the interface
Fermi level at a position not significantly different from that of an
abrupt interface. Our calculations also show that the interface band
lineup is not strongly dependent on the interface morphology changes s
tudied. The p type SBH is reduced by less than 0.1 eV if the GaN surfa
ce is Ga terminated compared to the N terminated one. Moreover, we sho
w that bath an ultrathin GaxAl1-xN (x = 0, 0.5) intralayer and a Ga<->
Al atomic swap at the interface do not significantly affect the Schott
ky barrier height.[S0163-1829(98)07335-4].