SILICON ANISOTROPIC ETCHING IN ALKALINE-SOLUTIONS II - ON THE INFLUENCE OF ANISOTROPY ON THE SMOOTHNESS OF ETCHED SURFACES

Authors
Citation
I. Zubel, SILICON ANISOTROPIC ETCHING IN ALKALINE-SOLUTIONS II - ON THE INFLUENCE OF ANISOTROPY ON THE SMOOTHNESS OF ETCHED SURFACES, Sensors and actuators. A, Physical, 70(3), 1998, pp. 260-268
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
70
Issue
3
Year of publication
1998
Pages
260 - 268
Database
ISI
SICI code
0924-4247(1998)70:3<260:SAEIAI>2.0.ZU;2-T
Abstract
Experiments were carried out with anisotropic etching of Si(100) in al kaline solutions from the point of view of surface quality. The circum stances needed to obtain surfaces of various level of smoothness were established. The problem why etched surface is of mirror-like quality, texturized i.e., covered on the whole with random inequality ( someti me of pyramids shape) as well ones covered with single separated hillo cks is discussed in the term of anisotropy. Some analogies between ran dom texturizing, obtaining the hillocks and etching through a patterne d SiO2 mask were stated. (C) 1998 Elsevier Science S.A. All rights res erved.