PRODUCTION OF A QUASI-TRAVELING WAVE IN SILICON MEMBRANES WITH A THINDEPOSITED LAYER OF SOL-GEL PZT

Citation
S. Biwersi et al., PRODUCTION OF A QUASI-TRAVELING WAVE IN SILICON MEMBRANES WITH A THINDEPOSITED LAYER OF SOL-GEL PZT, Sensors and actuators. A, Physical, 70(3), 1998, pp. 291-295
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
70
Issue
3
Year of publication
1998
Pages
291 - 295
Database
ISI
SICI code
0924-4247(1998)70:3<291:POAQWI>2.0.ZU;2-C
Abstract
In this paper, we present the excitation of travelling waves in a rect angular silicon membrane covered with a thin sol-gel PZT layer. We fir st describe the process of deposition and poling of the PZT layer and the measurements of its electro-mechanical properties. Then, we have g enerated travelling waves in the membrane using a single-phase drive o n the piezoelectric stack and we characterized the deformation modes u sing a special interferometer technique. Finally, we show that, by gen erating micron scale amplitudes of vibration, ic will be possible to r ealise micro-actuators using this principle. (C) 1998 Elsevier Science S.A. All rights reserved.