GROWTH AND DISSOLUTION RATES ON GAP(111)B FACET SURFACE DURING SOLUTION GROWTH UNDER A TRANSVERSE STATIC MAGNETIC-FIELD

Authors
INATOMI Y AOKI S KURIBAYASHI K SAWADA Y
Citation
Y. Inatomi et al., GROWTH AND DISSOLUTION RATES ON GAP(111)B FACET SURFACE DURING SOLUTION GROWTH UNDER A TRANSVERSE STATIC MAGNETIC-FIELD, Crystal research and technology, 33(6), 1998, pp. 857-866
Citations number
19
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
33
Issue
6
Year of publication
1998
Pages
857 - 866
Database
ISI
SICI code
0232-1300(1998)33:6<857:GADROG>2.0.ZU;2-J
Abstract
Growth and dissolution rates on GaP(111)B facet surface during solutio n growth have been measured using near-infrared (NIR) microscopic inte rferometry under a transverse static magnetic field. We show that the possibility of solutal convection in the liquid causes the difference between the growth and dissolution rates.