ALGAAS HIGH-POWER SHORT-WAVELENGTH SUPERLUMINESCENT INTEGRATED SOURCE

In order to solve the problem in the conventional superluminescent dio de (SLD), i.e. its output power is not high enough for some applicatio ns, a monolithic superluminescent source by integrating SLD with the t apered semiconductor amplifier has been designed and fabricated. An Al GaAs heterostructure wafer, gain guide of oxide stripe and a way of di rect coupling were adopted. The experimental results show that the sup erluminescent output of SLD can be amplified for about 22 dB by the ta pered optical amplifier. A maximum output power of 580 mW has been obt ained under pulsed condition.