ION-IMPLANTATION IN ALXGA1-XAS - DAMAGE STRUCTURES AND AMORPHIZATION MECHANISMS

Authors
LAGOW BW TURKOT BA ROBERTSON IM COLEMAN JJ ROH SD FORBES DV REHN LE BALDO PM
Citation
Bw. Lagow et al., ION-IMPLANTATION IN ALXGA1-XAS - DAMAGE STRUCTURES AND AMORPHIZATION MECHANISMS, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 606-618
Citations number
68
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
606 - 618
Database
ISI
SICI code
1077-260X(1998)4:4<606:IIA-DS>2.0.ZU;2-7
Abstract
We review previous research on ion implantation in AlxGa1-xAs-GaAs het erostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account f or damage accumulation and amorphization in this system. In considerin g all of the experimental observations, the most consistent descriptio n is one where amorphization occurs by a combination of point-defect b uildup and direct impact amorphization mechanisms.