ANODIC-OXIDE-INDUCED INTERMIXING IN GAAS-ALGAAS QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES

Authors
YUAN S JAGADISH C KIM Y CHANG Y TAN HH COHEN RM PETRAVIC M DAO LV GAL M CHAN MCY LI EH O JS ZORY PS
Citation
S. Yuan et al., ANODIC-OXIDE-INDUCED INTERMIXING IN GAAS-ALGAAS QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 629-635
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
629 - 635
Database
ISI
SICI code
1077-260X(1998)4:4<629:AIIGQA>2.0.ZU;2-P
Abstract
Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-Al GaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the photolumine scence (PL) energy shift due to intermixing. Anodic oxide induced inte rmixing has been used to enhance quantum-wire PL in the structures gro wn on V-groove patterned GaAs substrates, This has been attributed to enhanced lateral confinement in these structures. Injection of defects such as group-III vacancies or interstitials was considered to be dri ving force for the intermixing.