A THEORETICAL-ANALYSIS OF QUANTUM-WIRE FABRICATION BY VACANCY-ENHANCED INTERDIFFUSION OF QUANTUM-WELLS

Citation
Ks. Chan et al., A THEORETICAL-ANALYSIS OF QUANTUM-WIRE FABRICATION BY VACANCY-ENHANCED INTERDIFFUSION OF QUANTUM-WELLS, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 701-705
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
701 - 705
Database
ISI
SICI code
1077-260X(1998)4:4<701:ATOQFB>2.0.ZU;2-E
Abstract
The fabrication of quantum-wire structures using vacancy enhanced inte rdiffusion of quantum wells is analyzed theoretically. A phenomenologi cal equation is used to describe the effects of strain on vacancy diff usion. The quantum-wipe confinement potentials are studied as a functi on of the trench opening widths and the separation distances from the SiO2-AlGaAs interface. The lateral confinement energy is not a monoton ic function of the trench opening width. It first increases and then d ecreases when the trench opening width is decreased. When the separati on distance of the quantum wire from the interface is reduced, the con finement potential is changed from a nonsquare profile to a square-wel l profile.