Ks. Chan et al., A THEORETICAL-ANALYSIS OF QUANTUM-WIRE FABRICATION BY VACANCY-ENHANCED INTERDIFFUSION OF QUANTUM-WELLS, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 701-705
The fabrication of quantum-wire structures using vacancy enhanced inte
rdiffusion of quantum wells is analyzed theoretically. A phenomenologi
cal equation is used to describe the effects of strain on vacancy diff
usion. The quantum-wipe confinement potentials are studied as a functi
on of the trench opening widths and the separation distances from the
SiO2-AlGaAs interface. The lateral confinement energy is not a monoton
ic function of the trench opening width. It first increases and then d
ecreases when the trench opening width is decreased. When the separati
on distance of the quantum wire from the interface is reduced, the con
finement potential is changed from a nonsquare profile to a square-wel
l profile.