Wm. Man et Sf. Yu, COMPREHENSIVE MODELING OF DIFFUSED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 715-722
A numerical model for investigating the thermal, electrical, and optic
al characteristics of vertical-cavity surface-emitting lasers (VCSEL's
) with a diffused quantum-well (QW) structure is presented. In the mod
el, the quasi-three-dimensional (quasi-3-D) distribution of temperatur
e, voltage and optical fields as well as the quasi-two-dimensional (qu
asi-2-D) diffusion and recombination of carrier concentration inside t
he QW active layer are calculated in a self-consistent manner. In addi
tion, the quasi-3-D distribution of implanted ions before and after th
ermal annealing are computed. The variation of electrical conductivity
and absorption loss as well as the influence of impurity induced comp
ositional disordering on the optical gain and refractive index of the
QW active layer are also taken into consideration, Using this model, t
he steady-state characteristics of diffused QW VCSEL's are studied the
oretically. It is shown that significant improvement of stable single-
mode operation can be obtained using diffused QW structure.