COMPREHENSIVE MODELING OF DIFFUSED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors
Citation
Wm. Man et Sf. Yu, COMPREHENSIVE MODELING OF DIFFUSED QUANTUM-WELL VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 715-722
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
715 - 722
Database
ISI
SICI code
1077-260X(1998)4:4<715:CMODQV>2.0.ZU;2-V
Abstract
A numerical model for investigating the thermal, electrical, and optic al characteristics of vertical-cavity surface-emitting lasers (VCSEL's ) with a diffused quantum-well (QW) structure is presented. In the mod el, the quasi-three-dimensional (quasi-3-D) distribution of temperatur e, voltage and optical fields as well as the quasi-two-dimensional (qu asi-2-D) diffusion and recombination of carrier concentration inside t he QW active layer are calculated in a self-consistent manner. In addi tion, the quasi-3-D distribution of implanted ions before and after th ermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced comp ositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration, Using this model, t he steady-state characteristics of diffused QW VCSEL's are studied the oretically. It is shown that significant improvement of stable single- mode operation can be obtained using diffused QW structure.