SEMICONDUCTOR-LASERS USING DIFFUSED QUANTUM-WELL STRUCTURES

Authors
Citation
Sf. Yu et Eh. Li, SEMICONDUCTOR-LASERS USING DIFFUSED QUANTUM-WELL STRUCTURES, IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 723-735
Citations number
50
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
723 - 735
Database
ISI
SICI code
1077-260X(1998)4:4<723:SUDQS>2.0.ZU;2-C
Abstract
We assess the relative merits and prospects of using diffused quantum- well (QW) structures in semiconductor lasers. First, different techniq ues to achieve interdiffusion are analyzed and compared. Second, recen t development of semiconductor lasers using interdiffusion technique i s also discussed. Third, the optical properties of diffused QW's are s tudied. In addition, novel design of diffused QW's structures to maint ain stable single-mode operation in semiconductor lasers is proposed. Finally, brief discussion and conclusion are given.