BLUESHIFTING OF INGAASP-INP LASER-DIODES USING A LOW-ENERGY ION-IMPLANTATION TECHNIQUE - COMPARISON BETWEEN STRAINED AND LATTICE-MATCHED QUANTUM-WELL STRUCTURES

Blueshifted InGaAsP-InGaAs-InP laser diodes have been fabricated using a technique that includes a low-energy ion implantation, used to gene rate point defects near the surface of the structure, followed by a th ermal anneal which causes the diffusion of these defects through the q uantum wells (QW's), This diffusion of point defects induces a local i ntermixing of atoms in the QW's and barriers, which results in a decre ase in the emission wavelength of the devices. Results obtained with s trained and lattice-matched QW structures are compared. For lattice-ma tched structures, electroluminescence wavelength shifts as large as 76 nm were obtained. Strained QW structures presented a much smaller blu eshift (approximate to 10 nm), In both cases, we observed no significa nt change of the threshold current caused by the intermixing process.