LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 4, PG 490, 1998)

Authors
DOMEN K KURAMATA A SOEJIMA R HORINO K KUBOTA S TANAHASHI T
Citation
K. Domen et al., LASING MECHANISM OF INGAN-GAN-ALGAN MQW LASER-DIODE GROWN ON SIC BY LOW-PRESSURE METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 4, PG 490, 1998), IEEE journal of selected topics in quantum electronics, 4(4), 1998, pp. 803-803
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic",Optics
Journal title
IEEE journal of selected topics in quantum electronics → ACNP
ISSN journal
1077260X
Volume
4
Issue
4
Year of publication
1998
Pages
803 - 803
Database
ISI
SICI code
1077-260X(1998)4:4<803:LMOIML>2.0.ZU;2-8