Authors
Citation
J. Desimoni et Fh. Sanchez, EPITAXIAL GAMMA-IRON SILICIDE GROWN ON SINGLE-CRYSTAL SI - A SUMMARY OF MOSSBAUER RESULTS, Hyperfine interactions, 113(1-4), 1998, pp. 403-410
Citations number
21
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
ISSN journal
03043843
Volume
113
Issue
1-4
Year of publication
1998
Pages
403 - 410
Database
ISI
SICI code
0304-3843(1998)113:1-4<403:EGSGOS>2.0.ZU;2-7
Abstract
Metastable gamma-FeSi2 grown on or into single-crystals of silicon can
be produced by different techniques as molecular beam epitaxy, and io
n implantation followed by ion beam induced epitaxial crystallisation.
In these investigations, Mossbauer effect has been used to provide sh
ort range order information about the system. We present here a summar
y of these results, which will be compared and discussed.