CLEAVED CAVITY STIMULATED-EMISSION FROM AN OPTICALLY PUMPED CUBIC GANALGAN HETEROSTRUCTURE GROWN ON GAAS (100) SUBSTRATE/

Authors
WU J YAGUCHI H ONABE K SHIRAKI Y
Citation
J. Wu et al., CLEAVED CAVITY STIMULATED-EMISSION FROM AN OPTICALLY PUMPED CUBIC GANALGAN HETEROSTRUCTURE GROWN ON GAAS (100) SUBSTRATE/, Applied physics letters, 73(14), 1998, pp. 1931-1933
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
14
Year of publication
1998
Pages
1931 - 1933
Database
ISI
SICI code
0003-6951(1998)73:14<1931:CCSFAO>2.0.ZU;2-L
Abstract
Cubic GaN/AlGaN double heterostructure was grown on semi-insulating Ga As (100) substrate by metalorganic vapor phase epitaxy. Strong stimula ted emission was observed from the cleaved edge of the optically pumpe d cubic GaN/AlGaN heterostructure at 15 K. The cavity was formed simpl y by cleaving the substrate. The stimulated emission was demonstrated by the superlinear increase of the output intensity and the highly tra nsverse electric polarized nature. The stimulated emission showed an o bvious redshift compared with the spontaneous one. (C) 1998 American I nstitute of Physics. [S0003-6951(98)01140-1].