D. Pan et al., NORMAL-INCIDENCE INTERSUBBAND (IN, GA)AS GAAS QUANTUM-DOT INFRARED PHOTODETECTORS/, Applied physics letters, 73(14), 1998, pp. 1937-1939
We report the device performance of normal-incidence (In, Ga)As/GaAs q
uantum dot intersubband infrared photodetectors. A primary intersubban
d transition peak is observed at the wavelength of 13 mu m (E-0 --> E-
1) and a secondary peak at 11 mu m (E-0 --> E-2). The measured energy
spacing in the conduction band of the quantum dots is in good agreemen
t with low temperature photoluminescence measurement and calculations.
A peak detectivity of 1 x 10(10) cm Hz(1/2)/W at 13 mu m was achieved
at 40 K for these devices. (C) 1998 American Institute of Physics. [S
0003-6951(98)01440-5].