POISSONS RATIO MEASUREMENT IN TUNGSTEN THIN-FILMS COMBINING AN X-RAY DIFFRACTOMETER WITH IN-SITU TENSILE TESTER

Citation
Po. Renault et al., POISSONS RATIO MEASUREMENT IN TUNGSTEN THIN-FILMS COMBINING AN X-RAY DIFFRACTOMETER WITH IN-SITU TENSILE TESTER, Applied physics letters, 73(14), 1998, pp. 1952-1954
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
14
Year of publication
1998
Pages
1952 - 1954
Database
ISI
SICI code
0003-6951(1998)73:14<1952:PRMITT>2.0.ZU;2-U
Abstract
A direct determination of the Poisson's ratio in 150 nm polycrystallin e tungsten thin films deposited by ion-beam sputtering on Duralumin su bstrates has been performed by combining x-ray diffraction measurement s with in situ traction on the sample. X-ray diffraction experiments u sing the sin (2) psi method have been done at LURE, the French synchro tron facility (Orsay, France) on a four-circle diffractometer. The met hod described in this letter allows us to extract in a simple way and with a good precision the Poisson's ratio of thin films on substrates from the evolution of the sin(2) psi curves as a function of applied s trains. In the case of tungsten thin film, the value obtained is close to the bulk material one. (C) 1998 American Institute of Physics. [S0 003-6951(98)00240-X].