Po. Renault et al., POISSONS RATIO MEASUREMENT IN TUNGSTEN THIN-FILMS COMBINING AN X-RAY DIFFRACTOMETER WITH IN-SITU TENSILE TESTER, Applied physics letters, 73(14), 1998, pp. 1952-1954
A direct determination of the Poisson's ratio in 150 nm polycrystallin
e tungsten thin films deposited by ion-beam sputtering on Duralumin su
bstrates has been performed by combining x-ray diffraction measurement
s with in situ traction on the sample. X-ray diffraction experiments u
sing the sin (2) psi method have been done at LURE, the French synchro
tron facility (Orsay, France) on a four-circle diffractometer. The met
hod described in this letter allows us to extract in a simple way and
with a good precision the Poisson's ratio of thin films on substrates
from the evolution of the sin(2) psi curves as a function of applied s
trains. In the case of tungsten thin film, the value obtained is close
to the bulk material one. (C) 1998 American Institute of Physics. [S0
003-6951(98)00240-X].