GROWTH OF CAF2 ON SI(111) - IMAGING OF THE CAF INTERFACE BY FRICTION FORCE MICROSCOPY

The initial growth state of CaF2/Si(111) has been investigated in the high-temperature regime (700 degrees C). At these growth temperatures the interface between CaF2 and Si consists of CaF with the Ca atoms bo und to the Si. Using friction force microscopy it is possible to disti nguish between the interfacial CaF layer and the overgrowing CaF2 with high lateral resolution: the CaF layer has a higher friction coeffici ent than the bulklike CaF2. This material contrast has been used to in vestigate the CaF2 nucleation on the interfacial CaF layer. (C) 1998 A merican Institute of Physics. [S0003-6951(98)04440-4].