ENHANCEMENT OF THE QUANTUM EFFICIENCY AND STABILITY OF ELECTROLUMINESCENCE FROM POROUS SILICON BY ANODIC PASSIVATION

The use of anodic oxidation as a post-treatment of porous silicon has been investigated to enhance the external quantum efficiency of electr oluminescence from a device based on a thin transparent indium tin oxi de contact on porosified n(+)-type silicon. Enhancement in external qu antum efficiency of three orders of magnitude has been obtained. We re port here an external quantum efficiency of 0.21%. The treatment also greatly improves the stability of the device. Results can be explained by the fact that anodic oxidation considerably reduces leakage curren t flowing via nonconfined silicon. (C) 1998 American Institute of Phys ics. [S0003-6951(98)04740-8].