HOLE TRAP LEVELS IN MG-DOPED GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase e pitaxy (MOVPE) are studied with deep level transient spectroscopy (DLT S). The Mg concentration of the sample was 4.8 x 10(19) cm(-3), but th e hole concentration was as low as 1.3 x 10(17) cm(-3) at room tempera ture. The DLTS spectrum has a dominant peak D-1 with activation energy of 0.41+/-0.05 eV, accompanied by two additional peaks with activatio n energies of 0.49+/-0.09 eV (D-2) and 0.59+/-0.05 eV (D-3). It was fo und that the dominant peak D-1 consists of five peaks, each of which h as different activation energy and capture cross section. A relevant m odel for these levels is presented in relation to the Mg-N-H complexes . (C) 1998 American Institute of Physics. [S0003-6951(98)04340-X].