We have studied the formation of Cu clusters from Cu atoms deposited o
nto a Si (111) surface patterned with (2-5 mu m width) lines of photor
esist. In addition to a thin Cu layer on the exposed Si surface, large
(similar to 150 nm) clusters nucleate at the boundary between the Si
and the resist strips, which remain after removal of the resist by dis
solution. The results show how it is possible, using the resist to col
lect deposited atoms, to assemble nanoscale cluster structures with a
precision (similar to 150 nm feature size) which is much better than t
he resolution of conventional optical lithography (similar to mu m lin
ewidth). (C) 1998 American Institute of Physics. [S0003-6951(98)02940-
4].