ELECTRICAL-PROPERTIES OF N-N ZNSE IN0.04GA0.96AS(001) HETEROJUNCTIONS/

Authors
CAI C NATHAN MI RUBINI S SORBA L MUELLER B PELUCCHI E FRANCIOSI A
Citation
C. Cai et al., ELECTRICAL-PROPERTIES OF N-N ZNSE IN0.04GA0.96AS(001) HETEROJUNCTIONS/, Applied physics letters, 73(14), 1998, pp. 2033-2035
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
14
Year of publication
1998
Pages
2033 - 2035
Database
ISI
SICI code
0003-6951(1998)73:14<2033:EONZIH>2.0.ZU;2-J
Abstract
Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied b y means of current density versus voltage (J-V) and capacitance versus voltage (C-V) measurements. The resulting characteristics indicate th at the behavior of this n-n heterostructure can be explained by a back -to-back double Schottky diode model. The value of conduction band dis continuity (Delta E-c) is found to be 0.10-0.12 eV. (C) 1998 American Institute of Physics. [S0003-6951(98)01740-9].