RED AND INFRARED SIDE-BY-SIDE SEMICONDUCTOR QUANTUM-WELL LASERS INTEGRATED ON A GAAS SUBSTRATE

We report red and infrared quantum well (QW) semiconductor lasers inte grated on a GaAs substrate by etching and regrowth. A separate confine ment heterostructure infrared laser containing an In0.15Al0.15Ga0.7As/ Al0.4Ga0.6As QW with AlInP cladding layers was grown on a GaAs substra te. The wafer was then patterned with stripes of etch masks and was et ched back to the substrate. A Ga0.4In0.6P/(AlGa)(0.5)In(0.5)PQW separa te confinement heterostructure laser was subsequently grown side by si de with the infrared laser structure. Independently addressable dual- wavelength lasers of 50 mu m spacing were fabricated by forming 4 mu m wide buried ridge waveguides. The mm dual-wavelength lasers operated in threshold currents of 10 mA at a peak wavelength of 835 nm and 20 m A at a peak wavelength of 670 nm. (C) 1998 American Institute of Physi cs. [S0003-6951(98)02939-8].