INTENSE SHORT-WAVELENGTH PHOTOLUMINESCENCE FROM THERMAL SIO2-FILMS CO-IMPLANTED WITH SI AND C IONS

Intense short-wavelength photoluminescence (PL) observed at room tempe rature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 degrees C ann ealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples w ith and without annealing. The PL intensity increases with annealing t emperature. Comparing the PL spectra and the PL dynamics of the C-impl anted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- a nd C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films. (C) 1998 American Institute of Physics. [S0003-6951(98)00439-2] .