LATERAL INDEX GUIDING IN ZNCDSE QUANTUM-WELL LASERS BY SELECTIVE IMPLANTATION-INDUCED DISORDERING

Local implantation-induced disordering of ZnCdSe quantum wells is appl ied to generate lateral index guided II-VI lasers. Lateral selectivity of implanted nitrogen ions is achieved by metal stripes also used for contacts. Secondary ion mass spectroscopy and luminescence prove that quantum well intermixing can be generated without subsequent thermal treatment. Lateral index guiding in II-VI lasers after implantation is demonstrated by recording the near-field pattern, yielding a lateral index step of the order of 10(-3). First full index-guided injection l asers with an implantation-induced lateral confinement are processed. Threshold current density is reduced by 40% and emission characteristi cs of these lasers are strongly improved. (C) 1998 American Institute of Physics. [S0003-6951(98)03439-1].