FABRICATION OF SUB-MU-M BIPOLAR-TRANSISTOR STRUCTURES BY SCANNING PROBE MICROSCOPY

We show how sub-mu m sized transistor structures (down to 50 nm cross section) can be fabricated by thermally assisted electromigration of m obile dopants inside the semiconductor CuInSe2. Small device structure s are fabricated by application of an electric field to the sample via the contact, defined by a conducting atomic force microscope tip. The structures are characterized by nm scale scanning spreading resistanc e and scanning capacitance measurements to reveal the inhomogeneous do ping profiles created by the electric field. (C) 1998 American Institu te of Physics. [S0003-6951(98)03539-6].