MONTE-CARLO SIMULATIONS OF THE DECHANNELING AND BACK SCATTERING OF HE+ IONS BY LOOP DISLOCATIONS IN SILICON

Authors
MAZZONE AM
Citation
Am. Mazzone, MONTE-CARLO SIMULATIONS OF THE DECHANNELING AND BACK SCATTERING OF HE+ IONS BY LOOP DISLOCATIONS IN SILICON, Philosophical magazine letters, 78(4), 1998, pp. 277-282
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
78
Issue
4
Year of publication
1998
Pages
277 - 282
Database
ISI
SICI code
0950-0839(1998)78:4<277:MSOTDA>2.0.ZU;2-U
Abstract
In this work a Monte Carlo simulation method is used to describe decha nnelling and back scattering of He+ ions channelled along the [100] ax is of a defective silicon crystal. The disorder is due to a buried lay er of circular dislocation loops. Remarkable differences are found wit h respect to the results of the standard analytical treatments.