FORMATION OF IN- AND AU-IN-0.52 AL-0.48 AS(100) INTERFACES - A SOFT-X-RAY PHOTOEMISSION SPECTROSCOPY STUDY

We have examined the physical and chemical reactions occurring during the formation of intimate In- and Au-InAlAs(100) at room temperature. In deposition results in a two-dimensional mode of growth, followed by clustering. Au deposition however, perturbs the interface with As dif fusing into the Au overlayer. A Fermi shift is evident following the d eposition of In and Au, but in both cases this is lower than barrier h eights measured by transport techniques. Possible mechanisms for the o bserved adaptation of pinning position are discussed in the light of c urrent models of Schottky barrier formation. (C) 1998 American Institu te of Physics. [S0021-8979(98)06120-9].