The effect of the optical gap (E-opt) on the thermal recovery behavior
s of a-SiGe solar cells was systematically investigated. It was found
that the time constant and the activation energy required for the ther
mal annealing of metastable defects do not strongly depend on E-opt. T
he independence of the activation energy from E-opt suggests that the
variation of E-opt causes little energy difference in the trap depth o
f hydrogen, which should diffuse to remove metastable defects during n
etwork relaxation by annealing. It was also shown that the degradation
ratio for narrower E-opt cells exhibits greater temperature dependenc
e after prolonged light soaking. This tendency was analytically attrib
uted to the E-opt dependence of the light-induced defect creation proc
ess and the E-opt independence of the thermally induced annealing proc
ess. (C) 1998 American Institute of Physics. [S0021-8979(98)03519-1]