N. Konofaos et al., DEVICE CHARACTERIZATION FOR AMORPHOUS DIAMOND-LIKE CARBON-SILICON HETEROJUNCTIONS, Journal of applied physics, 84(8), 1998, pp. 4634-4636
We report here on the electrical characterization of Al/a-C:H/n-Si dev
ices, where the a-C:H films were ion implanted with boron. The current
-voltage characteristics versus temperature demonstrated the creation
of p-n heterojunctions and Schottky diodes. Maximum current outputs we
re reached faster for higher temperatures. Lower doses of boron implan
ts produced Schottky diode characteristics, with a current saturation
in the forward region due to the existing barrier. The values of the o
utput currents increased with temperature and implanted dose. (C) 1998
American Institute of Physics. [S0021-8979(98)00120-0]