SILICON INTERFACE LAYERS AT GAAS ALGAAS HETEROJUNCTIONS/

Authors
DEFRANCESCHI S ALTOMARE F BELTRAM F LAZZARINO M SORBA L FRANCIOSI A
Citation
S. Defranceschi et al., SILICON INTERFACE LAYERS AT GAAS ALGAAS HETEROJUNCTIONS/, Journal of applied physics, 84(8), 1998, pp. 4637-4639
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
84
Issue
8
Year of publication
1998
Pages
4637 - 4639
Database
ISI
SICI code
0021-8979(1998)84:8<4637:SILAGA>2.0.ZU;2-G
Abstract
The tunability of the band offset in buried GaAs/AlGaAs(001) heterojun ctions through insertion of Si interface layers is tested by means of transport techniques. We find that Si diffusion and segregation play a dominant role in spite of the relatively low growth temperatures empl oyed (500 degrees C), so that band-offset modification will be hindere d in practical devices. (C) 1998 American Institute of Physics. [S0021 -8979(98)08319-4]