INTERMIXING IN GAASSB GAAS SINGLE QUANTUM-WELLS/

Photoluminescence coupled with repetitive thermal annealing has been u sed to study the interdiffusion process in a 10 nm GaAs1-xSbx/GaAs sin gle quantum well. The diffusion equations and the Schrodinger equation were solved numerically to obtain the composition profile and the n=1 electron to heavy-hole transition energies in the intermixed quantum well, respectively. The intermixing process was shown to obey Fick's s econd law. (C) 1998 American Institute of Physics. [S0021-8979(98)0281 9-9].