TEMPERATURE EFFECTS ON THE ISFET BEHAVIOR - SIMULATIONS AND MEASUREMENTS

Authors
MARTINOIA S LORENZELLI L MASSOBRIO G CONCI P LUI A
Citation
S. Martinoia et al., TEMPERATURE EFFECTS ON THE ISFET BEHAVIOR - SIMULATIONS AND MEASUREMENTS, Sensors and actuators. B, Chemical, 50(1), 1998, pp. 60-68
Citations number
16
Categorie Soggetti
Electrochemistry,"Chemistry Analytical","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
50
Issue
1
Year of publication
1998
Pages
60 - 68
Database
ISI
SICI code
0925-4005(1998)50:1<60:TEOTIB>2.0.ZU;2-E
Abstract
Temperature effects on ion-sensitive field-effect transistor (ISFETs) are investigated both from theoretical and experimental point of view. An ISFET model has been implemented into a modified version of SPICE and the effects of temperature on the device behaviour over a user-def ined range of pH and temperature have been simulated. The simulated an d measured results are then compared and discussed. (C) 1998 Elsevier Science S.A. All rights reserved.