TO THE THEORY OF SEMICONDUCTOR GAS SENSORS

Physical processes in semiconductor gas sensors and dependencies of th e surface potential and concentration of charge carriers in the space charge region (SCR) of a semiconductor on the gas pressure contacting with a gas, are investigated. Corresponding sub-linear dependencies of the concentration of carriers on the pressure of an adsorbed gas are obtained in usual Langmuirian case and in the case when adsorption lea ds to a reduction in the heat of adsorption due to a charging of the s emiconductor surface. (C) 1998 Elsevier Science S.A. All rights reserv ed.