FLUENCE DEPENDENCE OF MEAN SPUTTER DEPTH FOR BOMBARDED PT-CU AND B-10-B-11 BINARY MATERIALS

Authors
Citation
Lp. Zheng et Rs. Li, FLUENCE DEPENDENCE OF MEAN SPUTTER DEPTH FOR BOMBARDED PT-CU AND B-10-B-11 BINARY MATERIALS, JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 11(5), 1995, pp. 349-352
Citations number
13
Categorie Soggetti
Material Science","Metallurgy & Metallurigical Engineering
ISSN journal
10050302
Volume
11
Issue
5
Year of publication
1995
Pages
349 - 352
Database
ISI
SICI code
1005-0302(1995)11:5<349:FDOMSD>2.0.ZU;2-7
Abstract
The mean sputter depth depends on the surface composition gradient dur ing ion implantation. For the high fluence ion implantation into a Pt- Cu alloy, the surface composition gradient of Cu is so large that the difference in mean sputter depth between Pt and Cu, is significant. Ho wever, for the high fluence ion implantation into B-10-B-11 isotope mi xture, the surface composition gradient of B-10 is so small that the d ifference in mean sputter depth between B-10 and B-11 is insignificant .